Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

InAs/Si Hetero-Junction Nanotube Tunnel Transistors

Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in 'ON' state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer...

fabrication of new ion sensitive field effect transistors (isfet) based on modification of junction-fet for analysis of hydronium, potassium and hydrazinium ions

a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...

Double oxidation scheme for tunnel junction fabrication

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Modeling, Fabrication and characterization oF Silicon tunnel Field-eFFect tranSiStorS

Over the last decades, the continuous down-scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) enabled faster and more complex chips while at the same time the space and power-consumption was kept under control. However, in the future, the further reduction of the power consumption per unit area will be restricted by a fundamental limit of the inverse subthreshold swing of M...